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M28F420 - 4-Megabit Flash Memory

Download the M28F420 datasheet PDF. This datasheet also covers the M28F410 variant, as both devices belong to the same 4-megabit flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The M28F410 and M28F420 FLASH MEMORIES are non-volatile memories that may be erased electrically at the block level and programmed by byte or word.

The interface is directly compatible with most microprocessors.

SO44 and TSOP56 packages are used.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M28F410_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M28F410 M28F420 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte or 4K Word Key Parameter Blocks – One 96K Byte or 48K Word Main Block – Three 128K Byte or 64K Word Main Blocks 5V ± 10% SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES PROGRAM/ERASE CONTROLLER AUTOMATIC STATIC MODE LOW POWER CONSUMPTION – 60μA Typical in Standby – 0.2μA Typical in Deep Power Down – 20/25mA Typical Operating Consumption (Byte/Word) HIGH SPEED ACCESS TIME: 70ns EXTENDED TEMPERATURE RANGES 44 1 TSOP56 (N) 14 x 20mm SO44 (M) Figure 1.