M29F002BB Datasheet | STMicroelectronics

M29F002BT M29F002BB, M29F002BNT 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME - 8µs by Byte typical 7 MEMORY BLOCKS - 1 Boot Block (Top or Bottom Location) - 2 Parameter and 4 Main Blocks PLCC32 (K) TSOP32 (N) 8 x 20mm s s s s PROGRAM/ERASE CONTROLLER - Embedded Byte Program algorithm - Embedded Multi-Block/Chip Erase algorithm - Status Register Polling and Toggle Bits 32 s ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend PDIP32 (P) s UNLOCK BYPASS PROGRAM MAND - Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION - Standby and Automatic Standby VCC s Figure 1. Logic Diagram s s 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION - Defectivity below 1 ppm/year ELECTRONIC SIGNATURE - Manufacturer Code: 20h - M29F002BT Device Code: B0h - M29F002BNT Device Code: B0h - M29F002BB Device Code: 34h G RP A0-A17 W E 8 DQ0-DQ7 s s M29F002BT M29F002BB...