M29F400B Description
The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Wordby-Word basis using only a single 5V V CC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
M29F400B Key Features
- in production but not remended for new designs. M29F400T, M29F400B Figure 2A. TSOP Pin Connections A15 A14 A1