M29F400T
DESCRIPTION
The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Wordby-Word basis using only a single 5V V CC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against pro November 1999
TSOP48 (N) 12 x 20 mm
SO44 (M)
Figure 1. Logic Diagram
18 A0-A17 W E G RP M29F400T M29F400B
15 DQ0-DQ14 DQ15A- 1 BYTE RB
AI01726B
1/34
This is information on a product stil l in production but not remended for new designs.
M29F400T, M29F400B
Figure 2A. TSOP Pin Connections
A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB NC A17 A7 A6 A5 A4 A3 A2 A1 1 48 A16 BYTE VSS DQ15A- 1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E...
