M29F800DB Description
9 Address Inputs (A0-A18). 9 Data Inputs/Outputs (DQ0-DQ7). 9 Data Inputs/Outputs (DQ8-DQ14).
M29F800DB Key Features
- VCC = 5V ±10% for Program, Erase and Read ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME
- 10µs per Byte/Word typical 19 MEMORY BLOCKS
- 1 Boot Block (Top or Bottom Location)
- 2 Parameter and 16 Main Blocks
- Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES
- Read and Program another Block during Erase Suspend
- Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE MON FLASH INTERFACE
- 64 bit Security Code LOW POWER CONSUMPTION
- Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE
- Manufacturer Code: 0020h