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M29W640D - FLASH NOR HIGH DENSITY & CONSUMER

Key Features

  • M29DW323 ¾32Mb (4Mbx8 / 2Mbx16), Boot Block ¾Access Time ¾70, 90ns ¾Supply Voltage ¾Vcc = 2.7V to 3.6V for Program, Erase and Read ¾Vpp = 12V for fast Program (optional) ¾Programming Time ¾10µs per Byte/Word typical ¾Double Word / Quadruple Byte Program ¾Low Power Consumption ¾Standby and Automatic Standby ¾Dual Operations: ¾Read in one bank or group of banks while Program or Erase in the other HD & Cons. Division - May, 2004 M29DW. ppt.
  • release 1.0.
  • ptfl0402-504- www. st. com/fl.

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Other Datasheets by STMicroelectronics

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLASH NOR HIGH DENSITY & CONSUMER M29DWxxx FAMILY Multiple Bank May, 2004 HD & Cons. Division -VAM29DW.ppt – ptfl0402-504 STMicroelectronics www.st.com/flash Family Overview ¾Densities from 32Mb to 64Mb ¾Wide application area covered ¾0.15µm process technology ¾technology shrink on going ¾higher densities ¾improved performances ¾Increased reliability HD & Cons. Division - May, 2004 M29DW.ppt – release 1.0 –ptfl0402-504- www.st.com/flash page 2 Main Features M29DW323 ¾32Mb (4Mbx8 / 2Mbx16), Boot Block ¾Access Time ¾70, 90ns ¾Supply Voltage ¾Vcc = 2.7V to 3.