Datasheet Summary
M29W640GH M29W640GL M29W640GT M29W640GB
64-Mbit (8 Mbit x8 or 4 Mbit x16, uniform block or boot block) 3 V supply flash memory
Feature
- Supply voltage
- VCC = 2.7 to 3.6 V for program/erase/read
- VPP =12 V for fast program (optional)
- Asynchronous random/page read
- Page width: 4 words
- Page access: 25 ns
- Random access: 60 ns, 70 ns, 90 ns
- Fast program mands
- 2-word/4-byte program (without VPP=12 V)
- 4-word/8-byte program (with VPP=12 V)
- 16-word/32-byte write buffer
- Programming time
- 10 μs per byte/word typical
- Chip program time: 10 s (4-word program)
- Memory organization
- M29W640GH/L: 128 main blocks, 64 Kbytes each
- M29W640GT/B Eight 8-Kbyte boot blocks (top or...
