M29W640GT
Features
Parallel NOR Flash Embedded Memory
M29W640GH, M29W640GL M29W640GT, M29W640GB
Features
- Supply voltage
- VCC = 2.7- 3.6V (program, erase, read)
- VPP = 12V for fast program (optional)
- Asynchronous random/page read
- Page width: 4 words
- Page access: 25ns
- Random access: 60ns, 70ns, 90ns
- Fast program mands
- 2-word/4-byte program (without VPP = 12V)
- 4-word/8-byte program (with VPP = 12V)
- 16-word/32-byte write buffer
- Programming time
- 10µs per byte/word TYP
- Chip program time: 10 s (4-word program)
- Double word/quadruple byte program
- Memory organization
- M29W640GH/L 128 main blocks, 64KB each
- M29W640GT/B 127 main blocks, 64KB each and 8 boot blocks, 8KB each
- Program/erase controller
- Embedded byte/word program algorithms
- Program/erase suspend and resume
- Read from any block during a PROGRAM SUSPEND operation
- Read or program another block during an ERASE SUSPEND operation
- Hardware block protection
- VPP/WP# pin for fast program and write protect
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