Part M29W640FB
Description Parallel NOR Flash Embedded Memory
Manufacturer Micron Technology
Size 701.82 KB
Micron Technology

M29W640FB Overview

Key Features

  • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VPP = 12V for fast program (optional)
  • Asynchronous random/page read – Page width: 4 words – Page access: 25ns – Random access: 60ns, 70ns
  • Program time – 10µs per byte/word TYP – 4 words/8 bytes program
  • Memory organization – 135 memory blocks – 1 boot block and 7 parameter blocks, 8KB each (top or bottom) – 127 main blocks, 64KB each
  • Program/erase controller – Embedded byte/word program algorithms
  • UNLOCK BYPASS PROGRAM command – Faster production/batch programming
  • VPP/WP# pin for fast program and write protect
  • Temporary block unprotection mode
  • Common Flash interface – 64-bit security code