M29W640GB Overview
Key Features
- Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VPP = 12V for fast program (optional)
- Asynchronous random/page read – Page width: 4 words – Page access: 25ns – Random access: 60ns, 70ns, 90ns
- Fast program commands – 2-word/4-byte program (without VPP = 12V) – 4-word/8-byte program (with VPP = 12V) – 16-word/32-byte write buffer
- Programming time – 10µs per byte/word TYP – Chip program time: 10 s (4-word program) – Double word/quadruple byte program
- Memory organization – M29W640GH/L 128 main blocks, 64KB each – M29W640GT/B 127 main blocks, 64KB each and 8 boot blocks, 8KB each
- Program/erase controller – Embedded byte/word program algorithms
- Hardware block protection – VPP/WP# pin for fast program and write protect – Temporary block unprotect mode
- Common Flash interface – 64-bit security code
- 128-word extended memory block – Extra block used as security block or to store additional information
- Low power consumption: Standby and automatic mode
