Datasheet Summary
M29W640GH, M29W640GL M29W640GT, M29W640GB
64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
Feature summary
- Supply Voltage
- VCC = 2.7V to 3.6V for Program, Erase, Read
- VPP =12V for Fast Program (optional)
- Asynchronous Random/Page Read
- Page Width: 4 Words
- Page Access: 25ns
- Random Access: 60ns, 70ns
- Fast Program mands
- 2 Words/4 Bytes Program (without VPP=12V)
- 4 Words/8 Bytes Program (with VPP=12V)
- 16 Word/32 Byte Write Buffer
- Programming time
- 10 µs per Byte/Word typical
- Chip Program time: 10s (using 4 Words Program)
- Memory organization
- M29W640GH/L: 128 Main Blocks, 64 KBytes each
- M29W640GT/B Eight 8 KBytes Boot Blocks (top or bottom location) 127...
