M29W640GH Overview
Key Features
- Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional)
- Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns
- Fast Program commands – 2 Words/4 Bytes Program (without VPP=12V) – 4 Words/8 Bytes Program (with VPP=12V) – 16 Word/32 Byte Write Buffer
- Programming time – 10 µs per Byte/Word typical – Chip Program time: 10s (using 4 Words Program)
- Program/Erase controller – Embedded Byte/Word Program algorithms
- Program/Erase Suspend and Resume – Read from any Block during Program Suspend – Read and Program another Block during Erase Suspend
- Unlock Bypass Program command – Faster Production/Batch Programming
- VPP/WP pin for Fast Program and Write Protect
- Temporary Block Unprotection mode FBGA TSOP48 (NA) 12 x 20mm TFBGA48 (ZA) 6 x 8mm FBGA TSOP56 (NB) 14 x 20mm(1) TBGA64 (ZF) 10 x 13mm(1)
- Packages only available upon request
