M29W640GL Overview
Key Features
- Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional)
- Asynchronous random/page read – Page width: 4 words – Page access: 25 ns – Random access: 60 ns, 70 ns, 90 ns
- Fast program commands – 2-word/4-byte program (without VPP=12 V) – 4-word/8-byte program (with VPP=12 V) – 16-word/32-byte write buffer
- Programming time – 10 μs per byte/word typical – Chip program time: 10 s (4-word program)
- Program/erase controller – Embedded byte/word program algorithms
- Packages only available upon request
- RoHS compliant packages
- 128-word extended memory block
- Low power consumption:standby and automatic standby
- Unlock Bypass Program command – Faster production/batch programming
