M29W640DT
FEATURES
SUMMARY s SUPPLY VOLTAGE
- VCC = 2.7V to 3.6V for Program, Erase, Read
- VPP =12 V for Fast Program (optional) s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAMMING TIME
- 10 µs per Byte/Word typical
- Double Word Programming Option s
135 MEMORY BLOCKS
- 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location)
- 127 Main Blocks, 64 KBytes each
TSOP48 (N) 12 x 20mm s
PROGRAM/ERASE CONTROLLER
- Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES
- Read and Program another Block during Erase Suspend
FBGA s
TFBGA63 (ZA) 63 ball array s
UNLOCK BYPASS PROGRAM MAND
- Faster Production/Batch Programming VPP/WP Pin for FAST PROGRAM and WRITE PROTECT TEMPORARY BLOCK UNPROTECTION MODE MON FLASH INTERFACE
- 64-bit Security Code EXTENDED MEMORY BLOCK
- Extra block used as security block or to store additional information s s s s s
LOW POWER CONSUMPTION
- Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC...
