M29W641DL
FEATURES
SUMMARY s SUPPLY VOLTAGE
- VCC = 2.7V to 3.6V Core Power Supply
- VCCQ = 1.8V to 3.6V for Input/Output
- VPP =12 V for Fast Program (optional) s s
Figure 1. Packages
ACCESS TIME: 70, 90, 100 and 120ns PROGRAMMING TIME
- 10 µs typical
- Double Word Program option s s
128 UNIFORM, 32-KWord MEMORY BLOCKS PROGRAM/ERASE CONTROLLER
- Embedded Program and Erase algorithms ERASE SUSPEND and RESUME MODES
- Read and Program another Block during Erase Suspend
TSOP48 (N) 12 x 20mm s s
UNLOCK BYPASS PROGRAM MAND
- Faster Production/Batch Programming WRITE PROTECT OPTIONS
FBGA s
- M29W641DH: WP Pin for Write Protection of Highest Address Block
- M29W641DL: WP Pin for Write Protection of Lowest Address Block
- M29W641DU: No Write Protection s TEMPORARY BLOCK UNPROTECTION MODE s s
TFBGA63 (ZA) 7 x 11mm
MON FLASH INTERFACE EXTENDED MEMORY BLOCK
- Extra block used as security block or to store additional information s
LOW POWER CONSUMPTION
- Standby and Automatic Standby...
