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M29W800AT - 8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

Description

The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply.

For Program and Erase operations the necessary high voltages are generated internally.

Features

  • h-4FFFFh 40000h-47FFFh 38000h-3FFFFh 30000h-37FFFh 28000h-2FFFFh 20000h-27FFFh 18000h-1FFFFh 10000h-17FFFh 08000h-0FFFFh 00000h-07FF.

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Datasheet preview – M29W800AT

Datasheet Details

Part number M29W800AT
Manufacturer STMicroelectronics
File Size 234.79 KB
Description 8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
Datasheet download datasheet M29W800AT Datasheet
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Other Datasheets by ST Microelectronics
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Full PDF Text Transcription

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M29W800AT M29W800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word – Status Register bits and Ready/Busy Output 1 44 s s s s s s SECURITY PROTECTION MEMORY AREA INSTRUCTION ADDRESS CODING: 3 digits MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks TSOP48 (N) 12 x 20mm SO44 (M) FBGA s s BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend LFBGA48 (ZA) 8 x 6 solder balls s Figure 1.
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