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M29W800DB - 3V supply flash memory

This page provides the datasheet information for the M29W800DB, a member of the M29W800DT 3V supply flash memory family.

Features

  • Supply voltage.
  • VCC = 2.7 V to 3.6 V for program, erase and read.
  • Access times: 45, 70, 90 ns.
  • Programming time.
  • 10 μs per byte/word typical.
  • 19 memory blocks.
  • 1 boot block (top or bottom location).
  • 2 parameter and 16 main blocks.
  • Program/erase controller.
  • Embedded byte/word program algorithms.
  • Erase suspend and resume modes.
  • Read and program another block during erase suspend.
  • U.

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Datasheet preview – M29W800DB

Datasheet Details

Part number M29W800DB
Manufacturer Numonyx
File Size 748.08 KB
Description 3V supply flash memory
Datasheet download datasheet M29W800DB Datasheet
Additional preview pages of the M29W800DB datasheet.

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Full PDF Text Transcription

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M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 V to 3.
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