M29W800D Datasheet | STMicroelectronics

FEATURES SUMMARY s SUPPLY VOLTAGE - VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 70, 90ns PROGRAMMING TIME - 10µs per Byte/Word typical 19 MEMORY BLOCKS - 1 Boot Block (Top or Bottom Location) - 2 Parameter and 16 Main Blocks SO44 (M) s s PROGRAM/ERASE CONTROLLER - Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend TSOP48 (N) 12 x 20mm s s UNLOCK BYPASS PROGRAM MAND - Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE MON FLASH INTERFACE - 64 bit Security Code s FBGA s TFBGA48 (ZA) 8 x 6 ball array s LOW POWER CONSUMPTION - Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Top Device Code M29W800DT: 22D7h - Bottom Device Code M29W800DB: 225Bh s s April 2002 1/41 M29W800DT, M29W800DB TABLE OF CONTENTS SUMMARY DESCRIPTION - - - - - - - - - - - . . . . 5 Figure 2. Logic Diagram - - - - - - - - - - - . . . 5 Table 1. Signal Names -...