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M36W108AB - 8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM

General Description

The M36W108A is multi-chip device containing an 8 Mbit boot block Flash memory and a 1 Mbit of SRAM.

The device is offered in the new Chip Scale Package solutions: LBGA48 1.0mm ball pitch and LGA48 1.0mm land pitch.

Key Features

  • USING TWO CHIP ENABLE INPUTS LOW VCC DATA.

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Datasheet Details

Part number M36W108AB
Manufacturer STMicroelectronics
File Size 252.13 KB
Description 8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM
Datasheet download datasheet M36W108AB Datasheet

Other Datasheets by STMicroelectronics

Part Number Description
M36W108AT 8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM
M36W108B 8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM
M36W108T 8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM
M36W416BG 16 Mbit 1Mb x16 / Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM
M36W416TG 16 Mbit 1Mb x16 / Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM
M36W432BG 32 Mbit 2Mb x16 / Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM
M36W432TG 32 Mbit 2Mb x16 / Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM
M36W832BE 32 Mbit 2Mb x16 / Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM
M36W832TE 32 Mbit 2Mb x16 / Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM
M36DR232 32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M36W108AT M36W108AB 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA s SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read s s ACCESS TIME: 100ns LOW POWER CONSUMPTION – Read: 40mA max. (SRAM chip) – Stand-by: 30µA max. (SRAM chip) – Read: 10mA max. (Flash chip) – Stand-by: 100µA max. (Flash chip) LBGA48 (ZM) 6 x 8 solder balls LGA48 (ZN) 6 x 8 solder lands BGA LGA FLASH MEMORY s 8 Mbit (1Mb x 8) BOOT BLOCK ERASE s s PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Status Register bits and Ready/Busy Output Figure 1.