M36W416BG Datasheet | STMicroelectronics

FEATURES SUMMARY s MULTIPLE MEMORY PRODUCT - 16 Mbit (1Mb x 16) Boot Block Flash Memory - 4 Mbit (256Kb x 16) SRAM s SUPPLY VOLTAGE - VDDF = VDDS = 2.7V to 3.3V - VDDQF = VDDS = 2.7V to 3.3V - VPPF = 12V for Fast Program (optional) s s s SRAM s 4 Mbit (256Kb x 16) s s s ACCESS TIME: 70ns LOW VDDS DATA RETENTION: 1.5V POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS ACCESS TIME: 70ns, 85ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Top Device Code, M36W416TG: 88CEh - Bottom Device Code, M36W416BG: 88CFh Figure 1. Packages FBGA FLASH MEMORY s MEMORY BLOCKS - Parameter Blocks (Top or Bottom location) - Main Blocks s Stacked LFBGA66 (ZA) 12 x 8mm PROGRAMMING TIME - 10µs typical - Double Word Programming Option s BLOCK LOCKING - All blocks locked at Power up - Any bination of blocks can be locked - WPF for Block Lock-Down s s s AUTOMATIC STAND-BY MODE PROGRAM and ERASE SUSPEND 100,000 PROGRAM/ERASE CYCLES per BLOCK MON FLASH INTERFACE - 64 bit Security Code SECURITY - 64 bit user programmable OTP cells - 64 bit unique device identifier - One parameter block permanently lockable s s November 2002 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/62 M36W416TG, M36W416BG TABLE OF CONTENTS SUMMARY DESCRIPTION - - - - -...