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M48T512V - 4 Mbit (512 Kbit x 8) TIMEKEEPER SRAM

Key Features

  • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ).
  • BCD coded year, month, day, date, hours, t(sminutes, and seconds c.
  • Automatic power-fail chip deselect and WRITE uprotection rod.
  • WRITE protect voltages: (VPFD = power-fail deselect voltage) P.
  • M48T512Y: VCC = 4.5 to 5.5 V; te4.2 V ≤ VPFD ≤ 4.5 V le.
  • M48T512V: VCC = 3.0 to 3.6 V; so2.7 V ≤ VPFD ≤ 3.0 V b.
  • Conventional SRAM operation; unlimited OWRITE cycl.

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M48T512Y M48T512V 5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER® SRAM Not recommended for new design Features ■ Integrated ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal )■ BCD coded year, month, day, date, hours, t(sminutes, and seconds c■ Automatic power-fail chip deselect and WRITE uprotection rod■ WRITE protect voltages: (VPFD = power-fail deselect voltage) P– M48T512Y: VCC = 4.5 to 5.5 V; te4.2 V ≤ VPFD ≤ 4.5 V le– M48T512V: VCC = 3.0 to 3.6 V; so2.7 V ≤ VPFD ≤ 3.