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M58BF008 Datasheet 8 Mbit 256Kb x32 / Burst Flash Memory

Manufacturer: STMicroelectronics

Overview: M58BF008 8 Mbit (256Kb x32, Burst) Flash Memory PRELIMINARY DATA s SUPPLY VOLTAGE – VDD = 5V Supply Voltage – VDDQ = 3.3V Input/Output Supply Voltage – Optional VPP = 12V for fast Program and Erase s CONFIGURABLE OPTIONS – Synchronous or Asynchronous write mode – Burst Wrap/No-wrap default – Critical Word X (3 or 4) and Burst Word Y (1 or 2) latency times BGA s ACCESS TIME – Synchronous X-Y-Y-Y Burst Read up to 40MHz – Asynchronous Read: 100ns LBGA80 (ZA) 10 x 8 solder balls PQFP80 (D) s s PROGRAMMING TIME: 10µs typical MEMORY BLOCKS – 32 equal Main blocks of 256 Kbit – One Overlay block of 256 Kbit Figure 1.

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General Description

The M58BF008 is a family of 8 Mbit non-volatile Flash memories that can be erased electrically at the block level and programmed in-system.

Family members are configured during product testing for a specific Synchronous or Asynchronous Write mode, a Burst default of Wrap or No-wrap and for Critical Word X = 3 or 4 and Burst Word Y = 1 or 2 latency times.

The Main memory array matrix allows each of the 32 equal blocks of 256 Kbit to be erased separately and re-programmed without affecting other blocks.

Key Features

  • a 256 Kbit Overlay block having the same address space as the first Main memory block. The Overlay block provides a secure storage area that is controlled by special Instructions and an external input. A separate supply VDDQ allows the Input/ Output signals to be at 3.3V levels, while the main supply VDD is 5V. February 2000 E G GD W LBA WR BAA M58BF008 VSS VSSQ AI02656B 1/36 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to.

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