The M58BF008 is a family of 8 Mbit non-volatile Flash memories that can be erased electrically at the block level and programmed in-system.
Features
a 256 Kbit Overlay block having the same address space as the first Main memory block. The Overlay block provides a secure storage area that is controlled by special Instructions and an external input. A separate supply VDDQ allows the Input/ Output signals to be at 3.3V levels, while the main supply VDD is 5V. February 2000
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VSS
VSSQ
AI02656B
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to.
M58CR032C- 32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
M58CR032D- 32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
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M58BF008
8 Mbit (256Kb x32, Burst) Flash Memory
PRELIMINARY DATA
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SUPPLY VOLTAGE – VDD = 5V Supply Voltage – VDDQ = 3.3V Input/Output Supply Voltage – Optional VPP = 12V for fast Program and Erase
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CONFIGURABLE OPTIONS – Synchronous or Asynchronous write mode – Burst Wrap/No-wrap default – Critical Word X (3 or 4) and Burst Word Y (1 or 2) latency times
BGA
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ACCESS TIME – Synchronous X-Y-Y-Y Burst Read up to 40MHz – Asynchronous Read: 100ns
LBGA80 (ZA) 10 x 8 solder balls
PQFP80 (D)
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PROGRAMMING TIME: 10µs typical MEMORY BLOCKS – 32 equal Main blocks of 256 Kbit – One Overlay block of 256 Kbit
Figure 1.
M58BF008 Datasheet
