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M58PR512LE Datasheet (M58PR001LE - M58PR512LE) Flash NOR / Mobile Terminal

Manufacturer: STMicroelectronics

Overview: www.DataSheet4U.com M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.

Download the M58PR512LE datasheet PDF. This datasheet also includes the M58PR001LE variant, as both parts are published together in a single manufacturer document.

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General Description

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Key Features

  • Supply voltage.
  • VDD = 1.7 V to 2.0 V for program, erase and read.
  • VDDQ = 1.7 V to 2.0 V for I/O buffers.
  • VPP = 9 V for fast program Synchronous/asynchronous read.
  • Synchronous burst read mode: 108 MHz, 66 MHz.
  • Asynchronous page read mode.
  • Random access: 96 ns Programming time.
  • 4.2 µs typical word program time using Buffer Enhanced Factory Program command Memory organization.
  • Multiple bank memory array: 32 Mbit banks (2.

More Datasheets from STMicroelectronics

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