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M58PR512LE - (M58PR001LE - M58PR512LE) Flash NOR / Mobile Terminal

Download the M58PR512LE datasheet PDF. This datasheet also covers the M58PR001LE variant, as both devices belong to the same (m58pr001le - m58pr512le) flash nor / mobile terminal family and are provided as variant models within a single manufacturer datasheet.

Description

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Features

  • Supply voltage.
  • VDD = 1.7 V to 2.0 V for program, erase and read.
  • VDDQ = 1.7 V to 2.0 V for I/O buffers.
  • VPP = 9 V for fast program Synchronous/asynchronous read.
  • Synchronous burst read mode: 108 MHz, 66 MHz.
  • Asynchronous page read mode.
  • Random access: 96 ns Programming time.
  • 4.2 µs typical word program time using Buffer Enhanced Factory Program command Memory organization.
  • Multiple bank memory array: 32 Mbit banks (2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M58PR001LE_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
M58PR001LE (M58PR001LE - M58PR512LE) Flash NOR / Mobile Terminal
M58PR256LE (M58PR001LE - M58PR512LE) Flash NOR / Mobile Terminal
M58BF008 8 Mbit 256Kb x32 / Burst Flash Memory
M58BW016BB 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories
M58BW016BT 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program Synchronous/asynchronous read – Synchronous burst read mode: 108 MHz, 66 MHz – Asynchronous page read mode – Random access: 96 ns Programming time – 4.
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