M58PR512LE
Features
- Supply voltage
- VDD = 1.7 V to 2.0 V for program, erase and read
- VDDQ = 1.7 V to 2.0 V for I/O buffers
- VPP = 9 V for fast program Synchronous/asynchronous read
- Synchronous burst read mode: 108 MHz, 66 MHz
- Asynchronous page read mode
- Random access: 96 ns Programming time
- 4.2 µs typical word program time using Buffer Enhanced Factory Program mand Memory organization
- Multiple bank memory array: 32 Mbit banks (256 Mb devices) 64 Mbit banks (512 Mb devices) 128 Mbit banks (1 Gb devices)
- Four EFA (extended flash array) blocks of 64 Kbits Dual operations
- Program/erase in one bank while read in others
- No delay between read and write operations Block locking
- All blocks locked at power-up
- Any bination of blocks can be locked with zero latency
- WP for block lock-down
- Absolute Write protection with VPP = VSS The M58PRxxx LE memories are only available as part of a multichip package device.
- Wafer
- -
- Security
- 64 bit unique device number
- 2112 bit...
