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MD2009DFX - High voltage NPN Power transistor

General Description

The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure.

The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.

RBE=60Ω typ.

Key Features

  • State-of-the-art technology:.
  • diffused collector “enhanced generation” More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power package U. L. compliant Integrated free wheeling diode In compliance with the 2002/93/EC European directive 1 3 2 ISOWATT218FX.

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www.DataSheet4U.com MD2009DFX High voltage NPN Power transistor for standard definition CRT display General features ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – diffused collector “enhanced generation” More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power package U.L. compliant Integrated free wheeling diode In compliance with the 2002/93/EC European directive 1 3 2 ISOWATT218FX Applications ■ Internal schematic diagram Horizontal deflection output for TV Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure.