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P10NB50FP - STP10NB50FP

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Full PDF Text Transcription (Reference)

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com ® STP10NB50 STP10NB50FP N - CHANNEL 500V - 0.55Ω - 10.6A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE STP10NB50 STP10NB50FP s s s s s V DSS 500 V 500 V R DS(on) < 0.60 Ω < 0.60 Ω ID 10.6 A 10.6 A TYPICAL RDS(on) = 0.55 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.