Datasheet Summary
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STP10NB50 STP10NB50FP
- CHANNEL 500V
- 0.55Ω
- 10.6A
- TO-220/TO-220FP PowerMESH™ MOSFET
TYPE STP10NB50 STP10NB50FP s s s s s
V DSS 500 V 500 V
R DS(on) < 0.60 Ω < 0.60 Ω
ID 10.6 A 10.6 A
TYPICAL RDS(on) = 0.55 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2
1 2
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on)...