P12NB30 Datasheet | STMicroelectronics

.Data Sheet.co.kr STP12NB30 STP12NB30FP - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P s s s s s V DSS 300 V 300 V R DS(on) < 0.40 Ω < 0.40 Ω ID 12A 6.5 A TYPICAL RDS(on) = 0.34 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY(UPS) s DC-DC & DC-AC CONVERTERS FOR TELE, INDUSTRIAL AND CONSUMER ENVIRONMENT...