P4NA80FI Description
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ( ) Pulse width limited by safe operating area S a t t e he Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage...