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STP4NA80FI Datasheet N - Channel Enhancement Mode Fast Power Mos Transistor

Manufacturer: STMicroelectronics

Overview: .. STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI s s s s s s s V DSS 800 V 800 V R DS( on) < 3Ω < 3Ω ID 4A 2.5 A TYPICAL RDS(on) = 2.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP4NA80 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) 800 800 ± 30 4 2.5 16 o Value STP4NA80FI Unit V V V 2.5 1.6 16 45 0.36 2000 A A A W W/o C V o o w w w a D .

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STP4NA80FI Distributor