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STP4NA80FI - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

This page provides the datasheet information for the STP4NA80FI, a member of the STP4NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR family.

Datasheet Summary

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Datasheet Details

Part number STP4NA80FI
Manufacturer STMicroelectronics
File Size 236.53 KB
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Datasheet download datasheet STP4NA80FI Datasheet
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www.DataSheet4U.com STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI s s s s s s s V DSS 800 V 800 V R DS( on) < 3Ω < 3Ω ID 4A 2.5 A TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
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