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STP4NA40F1 - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

This page provides the datasheet information for the STP4NA40F1, a member of the STP-4NA N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR family.

Datasheet Summary

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Datasheet preview – STP4NA40F1

Datasheet Details

Part number STP4NA40F1
Manufacturer STMicroelectronics
File Size 198.86 KB
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Datasheet download datasheet STP4NA40F1 Datasheet
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Full PDF Text Transcription

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STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA40 STP4NA40FI s s s s s s s V DSS 400 V 400 V R DS( on) < 2Ω < 2Ω ID 4A 2.8 A TYPICAL RDS(on) = 1.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
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