STP4NA40FI Datasheet | STMicroelectronics

STP4NA40 STP4NA40FI - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST P 4NA 40 ST P 4NA 40 F I VDSS 400 V 400 V R DS( on) <2Ω <2Ω 4A 2.8 A s TYPICAL RDS(on) = 1.7 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100o C s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR...