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STP4NA40FI Datasheet N-channel Enhancement Mode Fast Power Mos Transistor

Manufacturer: STMicroelectronics

Overview: STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST P 4NA 40 ST P 4NA 40 F I VDSS 400 V 400 V R DS( on) <2Ω <2Ω ID 4A 2.8 A s TYPICAL RDS(on) = 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol P ar amete r VD S Drain-source Voltage (VGS = 0) VDG R Drain-gate Voltage (RG S = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM(•) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max.

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STP4NA40FI Distributor