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STP4NA40FI - N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

This page provides the datasheet information for the STP4NA40FI, a member of the STP4NA40 N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR family.

Datasheet Summary

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Datasheet preview – STP4NA40FI

Datasheet Details

Part number STP4NA40FI
Manufacturer STMicroelectronics
File Size 179.87 KB
Description N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Datasheet download datasheet STP4NA40FI Datasheet
Additional preview pages of the STP4NA40FI datasheet.

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Full PDF Text Transcription

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STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST P 4NA 40 ST P 4NA 40 F I VDSS 400 V 400 V R DS( on) <2Ω <2Ω ID 4A 2.8 A s TYPICAL RDS(on) = 1.7 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
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