PD54003S-E Datasheet | STMicroelectronics

.. PD54003-E PD54003S-E RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs General Features - - - - Excellent thermal stability mon source configuration POUT = 3W with 12d B gain @ 500MHz New RF plastic package Power SO-10RF (formed lead) Description The PD54003 is a mon source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 7V in mon source mode at frequencies of up to 1GHz. The PD54003 Features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the Power SO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The Power SO-10RF is the first true Surfacemount Device (SMD) plastic RF power package. It is based on the highly reliable Power SO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF requirements, and offers excellent RF performance as well as ease of assembly. Surface-mount remendations are available in Application Note AN1294 (see .st./rf). Power SO-10RF (straight lead) Pin connection Source Gate Drain Order codes Part number PD54003-E PD54003S-E PD54003TR-E PD54003STR-E Package Power SO-10RF (formed lead) Power SO-10RF (straight lead) Power SO-10RF (formed lead) Power SO-10RF (straight lead) Packing Tube Tube Tape and reel Tape and reel March 2006 Rev 1 1/28 .st. 28 Contents PD54003-E, PD54003S-E Contents 1 Electrical data - - - - - - - - - ....