PD54008-E
PD54008-E is RF POWER transistor manufactured by STMicroelectronics.
RF power transistor, Ldmo ST plastic family N-channel enhancement-mode, lateral MOSFETs
Features
- Excellent thermal stability
- mon source configuration
- POUT = 8 W with 11.5d B gain @ 500 MHz/7.5 V
- New RF plastic package
Description
The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 7 V in mon source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, Power SO-10RF. Device’s superior linearity performance makes it an ideal solution for portable radio.
The Power SO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of...
