SD1542-04 Datasheet | STMicroelectronics

DESCRIPTION The SD1542-04 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD154204 is designed for applications requiring high peak power and low duty cycles such as IFF. The SD1542-04 is packaged in a hermetic metal/ceramic package with internal input matching, resulting in improved broadband performance and low thermal reistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter 4. Base Value Unit VCBO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 40 1350 +200 - 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance °C/W 1/5 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO ICES h FE IC = 25m A IE = 10m A VCE = 50V VCE = 5V IE = 0m A IC = 0m A IE = 0m A IC = 1A 65 3.5 - 5 - - - - - - 35 200 V V m A - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP Note: f = 1090 MHz f = 1090 MHz = 10 µ Sec, Duty Cyle PIN = 150 W PIN = 150 W = 1% VCE = 50 V VCE = 50 V 600 6.0 - - - -...