SD1541-01 Datasheet | STMicroelectronics

DESCRIPTION The SD1541-01 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD154101 is designed for applications requiring high peak power and low duty cycles such as DME. The SD1541-01 is packaged in a hermetic metal/ceramic package with internal input/output matching, resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 22 1458 +200 - 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 °C/W 1/5 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO ICES h FE IC = 25m A IC = 50m A IE = 10m A VCE = 50V VCE = 5V IE = 0m A VBE = 0V IC = 0m A IE = 0m A IC = .25A 65 65 3.5 - 5 - - - - - - - - 25 200 V V V m A - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP Note: f = 1025 - 1150MHz PIN = 90 W f = 1025 - 1150MHz PIN = 90 W VCE = 50 V VCE = 50 V 400 6.5 - - - - W d B Pulse W idth = 10 µSec, Duty Cycle = 1% This device i s sui table f or use under other pulse widt h/duty cycle condit ions. Please contact the fact ory for specific appli cat ions assi stance. TYPICAL...