SD1541-09 Datasheet | STMicroelectronics

DESCRIPTION The SD1541-09 is a gold metallized silicon NPN planar transistor. The SD1541-09 is designedfor applications requiring high peak and low duty cycles such as IFF. The SD1541-09 is packaged in a metal/ceramic package with internal input matching, resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 22 1458 +200 - 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance °C/W 1/4 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO ICES h FE IC = 25m A IC = 50m A IE = 10m A VCE = 50V VCE = 5V IE = 0m A IB = 0m A IC = 0m A IE = 0m A IC = .25A 65 65 3.5 - 5 - - - - - - - - 25 200 V V V m A - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP Note: f = 1090 MHz f = 1090 MHz = 10 µ Sec, Duty Cycle PIN = 90 W PIN = 90 W = 1% VCE = 50 V VCE = 50 V 450 7.0 - - - - W d...