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SD2900 - RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

General Description

The SD2900 is a gold metallized N-Channel MOS field-effect RF power transistor.

1.

Drain 2.

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® SD2900 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs s s s s s s s s GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - 500 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY M113 epoxy sealed ORDER CODE BRANDING SD2900 SD2900 DESCRIPTION The SD2900 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz PIN CONNECTION 1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1M Ω) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage Temperature Value 65 65 ± 20 900 21.9 200 -65 to 150 3.Gate 4.