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SD2918 - RF power transistor HF/VHF/UHF n-channel MOSFET

General Description

The SD2918 is a n-channel MOS field-effect RF power transistor.

It is intended for use in 50 V dc large signal applications up to 200 MHz.

Figure 1.

Key Features

  • Gold metallization.
  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 30 W min. with 18 dB gain @ 30 MHz.

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SD2918 RF power transistor HF/VHF/UHF n-channel MOSFETs Features ■ Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W min. with 18 dB gain @ 30 MHz Description The SD2918 is a n-channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up to 200 MHz. M113 Epoxy sealed Figure 1. Pin connection 4 1. Drain 3 2. Source 3. Gate 1 2 4. Source Table 1. Device summary Order code SD2918 Marking SD2918 Package M113 Packaging Plastic tray November 2009 Doc ID 6866 Rev 2 1/14 www.st.com 14 Contents Contents SD2918 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . .