ST2317DFX Datasheet | STMicroelectronics

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218FX INTERNAL SCHEMATIC DIAGRAM RBE =32 Ω Typ. ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Base Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T C = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1700 600 7 10 20 7 70 2500 -65 to 150 150 Unit V V V A A A W V o o C C 1/5 December 2003 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.8 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CES I EBO V (BR)EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Test Conditions V CE = 1700 V V CE = 1700 V V EB = 4 V I E = 800 m A T j = 125 o C 85 7 Min. Typ. Max. 0.5 1 205 Unit m A m A m A V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ IC = 6 A IC = 6 A IC = 1 A IC = 6 A IC = 6 A IE = 0 I B = 1.2 A I B = 1.2 A V CE = 5 V V CE = 1.5 V V CE = 5 V V CB = 10 V f = 1 MHz 0.9 20 6 6 180 5 1.2 10 p F C COB Collector-Output Capacitance INDUCTIVE LOAD Storage Time Fall Time Transition Frequency ts tf f T Vf I C = 6 A f = 16 KHz V CC = 135 V L = 480 µ H V (flyback) = 1050 V L BB(off) = 2.3 µ H C sn = 25 n F V BB(off) = -2.7 V δ = 60% V CE = 10 V I C = 0.1 A f = 1 MHz 2.5 0.3 4.5 0.7 µs µs MHz 2 1.6 2.0 Diode Forward Voltage I F = 8 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/5 Figure 1: Inductive Load Switching Test Circuit. 3/5 ISOWATT218FX MECHANICAL...