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ST2317S23RG - P-Channel Enhancement Mode MOSFET

General Description

ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST2317S23RG
Manufacturer Stanson Technology
File Size 869.76 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST2317S23RG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are required in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L 3 17YW 1 2 Y: Year Code W: Week Code FEATURE l -40V/-5.0A, RDS(ON) = 37mΩ (Typ.) @VGS = -10V l -40V/-3.0A, RDS(ON) = 51mΩ @VGS = -4.