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ST2318SRG - N-Channel Enhancement Mode MOSFET

General Description

ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST2318SRG
Manufacturer Stanson Technology
File Size 207.79 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST2318SRG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 18YW 1 2 Y: Year Code W: Week Code FEATURE 40V/3.9A, RDS(ON) = 42mΩ (Typ.) @VGS = 10V 40V/3.5A, RDS(ON) = 53mΩ @VGS = 4.5V 40V/2.0A, RDS(ON) = 75 mΩ @VGS = 2.