Datasheet Details
| Part number | ST2318 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 313.90 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 ST2318 Datasheet
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| Part number | ST2318 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 313.90 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
ST2318 Datasheet
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ST2318 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
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