ST2300SRG Datasheet | Stanson Technology

N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23 1.Gate 2.Source 3.Drain FEATURE 20V/6.0A, RDS(ON) = 35mΩ (Typ.) @VGS = 10V 20V/5.0A, RDS(ON) = 48mΩ @VGS =...