ST2301A Datasheet | Stanson Technology

P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 FEATURE -20V/-3.2A, RDS(ON) =85mΩ (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 100mΩ @VGS = -2.5V Super...