ST2301A Datasheet PDF | Stanson Technology

Stanson Technology ST2301A

ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

Part No.	ST2301A
Datasheet	ST2301A Download
Manufacturer	Stanson Technology
Description	P-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE -20V/-3.2A, RDS(ON) =85mΩ (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 100mΩ @VGS = -2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 S01YA 1 2 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST2301A 2005. V1 ST2301A P Channel Enhancement Mode MOSFET -3.2A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -20 ±12 -3.2 -2.0 -10 -1.6 1.25 0.8 150 -55/150 120 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST2301A 2005.