ST2300 Datasheet PDF | Stanson Technology

Stanson Technology ST2300

The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

Part No.	ST2300
Datasheet	ST2300 Download
Manufacturer	Stanson Technology
Description	N-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L FEATURE 20V/6.0A, RDS(ON) = 22mΩ (Typ.) @VGS = 10V 20V/5.0A, RDS(ON) = 36mΩ @VGS = 4.5V 20V/4.5A, RDS(ON) = 45mΩ @VGS = 2.5V 20V/4.0A, RDS(ON) = 60mΩ @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability SOT-23-3L package design 3 42YA 1 2 Y: Year Code A: Process Code ORDERING INFORMATION Part Number ST2300 ※ Process Code : A ~ Z ; a ~ z Package SOT-23-3L Part Marking 42YA 1 120 Bentley Square, Mountain View, Ca 94040 USA ST2300 2005. V1 ST2300 N Channel Enhancement Mode MOSFET 6.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junc...