Datasheet Details
| Part number | ST2300 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 380.20 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | ST2300-StansonTechnology.pdf |
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Overview: ST2300 N Channel Enhancement Mode MOSFET 6.0A.
| Part number | ST2300 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 380.20 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | ST2300-StansonTechnology.pdf |
|
|
|
The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L
| Part Number | Description |
|---|---|
| ST2300SRG | N-Channel Enhancement Mode MOSFET |
| ST2301 | P Channel Enchancement Mode MOSFET |
| ST2301A | P-Channel Enhancement Mode MOSFET |
| ST2302 | 3.6A N-Channel Enchancement Mode MOSFET |
| ST2303 | P Channel Enchancement Mode MOSFET |
| ST2303SRG | P-Channel Enhancement Mode MOSFET |
| ST2304 | 3.2A N-Channel Enhancement Mode MOSFET |
| ST2304SRG | 3.2A N-Channel Enhancement Mode MOSFET |
| ST2305 | P Channel Enchancement Mode MOSFET |
| ST2305A | P Channel Enhancement Mode MOSFET |