Datasheet Details
| Part number | ST2301 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 124.77 KB |
| Description | P Channel Enchancement Mode MOSFET |
| Datasheet |
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| Part number | ST2301 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 124.77 KB |
| Description | P Channel Enchancement Mode MOSFET |
| Datasheet |
|
|
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ST2301 The ST2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.PIN CONFIGURATION
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