| Part number | ST2319SRG |
|---|---|
| Datasheet | ST2319SRG-StansonTechnology.pdf |
| File Size | 216.32 KB |
| Manufacturer | Stanson Technology |
| Description | P-Channel Enhancement Mode MOSFET |
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ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low...
See all Stanson Technology datasheets
| Part Number | Description |
|---|---|
| ST2317S23RG | P-Channel Enhancement Mode MOSFET |
| ST2318 | N-Channel Enhancement Mode MOSFET |
| ST2318SRG | N-Channel Enhancement Mode MOSFET |
| ST2300 | N-Channel Enhancement Mode MOSFET |
| ST2300SRG | N-Channel Enhancement Mode MOSFET |
| ST2301 | P Channel Enchancement Mode MOSFET |
| ST2301A | P-Channel Enhancement Mode MOSFET |
| ST2302 | 3.6A N-Channel Enchancement Mode MOSFET |
| ST2303 | P Channel Enchancement Mode MOSFET |
| ST2303SRG | P-Channel Enhancement Mode MOSFET |
