ST93C66 Datasheet | STMicroelectronics

.. ST93C66 ST93C67 4K (256 x 16 or 512 x 8) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN Figure 1. Logic Diagram DESCRIPTION This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10% and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66. The ST93C66 is a 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input (D) and output (Q). The 4K bit memory is divided into either 512 x 8 bit bytes or 256 x 16 bit words. The organization may be selected by a signal applied on the ORG input. Table 1. Signal Names S D Chip Select Input Serial Data Input Serial Data Output Serial Clock Organisation Select Supply Voltage Ground D C S ORG ST93C66 ST93C67 AI01252B ww.. Q C ORG VCC VSS July 1997 This is information on a product still in production bu t not remended for new de signs. 1/13 .. . .. 4U. Data Sheet 4 U . .. 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 256 x 16 or 512 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST93C66 version - 3V to 5.5V for ST93C67 version SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93C66 and ST93C67 are replaced by the M93C66 8 1 PSDIP8 (B) 0.4mm Frame 8 1 SO8 (CM) 150mil Width .. ST93C66, ST93C67 Figure 2A. DIP Pin Connections Figure 2B. SO Pin Connections ST93C66 ST93C67 S C D Q 1 2 3 4 8 7 6...