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STAC2932B - RF power transistors HF/VHF/UHF N-channel MOSFETs

General Description

The STAC2932B is a gold metallized N-channel MOS field-effect RF power transistor.

It is intended for use in 50 V DC large signal applications up to 250 MHz.

Figure 1.

Key Features

  • Gold metallization Excellent thermal stability Common source push-pull configuration POUT = 300 W min. with 20 dB gain @ 175 MHz In compliance with the 2002/95/EC European directive STAC244B Air cavity.

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STAC2932B www.datasheet4u.com RF power transistors HF/VHF/UHF N-channel MOSFETs Features ■ ■ ■ ■ ■ Gold metallization Excellent thermal stability Common source push-pull configuration POUT = 300 W min. with 20 dB gain @ 175 MHz In compliance with the 2002/95/EC European directive STAC244B Air cavity Description The STAC2932B is a gold metallized N-channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 250 MHz. Figure 1. Pin connection 1 1 2 2 1. Drain 2. Gate 3 3. Source (Bottom side) Table 1. Device summary Marking STAC2932 Package STAC244B Packaging Plastic tray Order code STAC2932B March 2009 Rev 1 1/13 www.st.com 13 Contents STAC2932B Contents 1 www.datasheet4u.com Electrical data . . . . . . . . . . . . . . . .