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STAC2932F - RF power transistor

General Description

The STAC2932F is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz.

Figure 1.

Key Features

  • Gold metallization.
  • Excellent thermal stability.
  • Common source push-pull configuration.
  • POUT = 300 W min. with 20 dB gain @ 175 MHz.
  • In compliance with the 2002/95/EC European directive.
  • ST air cavity packaging technology - STAC™ package.

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STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features ■ Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive ■ ST air cavity packaging technology - STAC™ package Description STAC244F Air cavity The STAC2932F is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. Figure 1. Pin connection 1 The STAC2932F benefits from the latest 1 generation of efficient, patent-pending package technology, otherwise known as STAC™. 2 2 3 1. Drain 2. Gate 3. Source (Bottom side) Table 1. Device summary Order code Marking Base qty.