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STAC3932B - RF power transistors HF/VHF/UHF N-channel MOSFETs

General Description

The STAC3932B is an N-channel MOS field-effect RF power transistor.

It is intended for use in 100 V DC large signal applications up to 250 MHz.

1.

Key Features

  • Excellent thermal stability.
  • Common source push-pull configuration.
  • POUT = 580 W typ. with 24.6 dB gain @ 123 MHz.
  • In compliance with the 2002/95/EC European directive.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STAC3932B HF/VHF/UHF RF power N-channel MOSFET STAC244B Air cavity Figure 1. Pin connection Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 580 W typ. with 24.6 dB gain @ 123 MHz • In compliance with the 2002/95/EC European directive Description The STAC3932B is an N-channel MOS field-effect RF power transistor. It is intended for use in 100 V DC large signal applications up to 250 MHz. 1 1 2 3 3 1. Drain 2. Source (bottom side) 3. Gate Table 1. Device summary Order code Marking Base qty. Package STAC3932B STAC3932(1) 20 STAC244B 1. For more details please refer to Chapter 8: Marking, packing and shipping specifications.