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STAC3932F - RF power transistors

General Description

The STAC3932F is a N-channel MOS field-effect RF power transistor.

It is intended for use in 100 V DC large signal applications up to 250 MHz.

Figure 1.

Key Features

  • Excellent thermal stability.
  • Common source push-pull configuration.
  • POUT = 580 W typ. with 24.6 dB gain @ 123 MHz.
  • In compliance with the 2002/95/EC European directive.

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STAC3932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description The STAC3932F is a N-channel MOS field-effect RF power transistor. It is intended for use in 100 V DC large signal applications up to 250 MHz. STAC244F Air cavity !-V Figure 1. Pin connection 2 1. Drain 2. Gate 1 1 2 3 3. Source (Bottom side) !-V Table 1. Device summary Order code Marking STAC3932F STAC3932F Package STAC244F Packaging Plastic tray March 2010 Doc ID 15513 Rev 4 This is preliminary information on a new product now in development or undergoing evaluation.